Infineon HEXFET N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF
- RS-stocknr.:
- 165-5834
- Fabrikantnummer:
- IRFR3707ZTRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 502,00
(excl. BTW)
€ 608,00
(incl. BTW)
Voeg 2000 eenheden toe voor gratis bezorging
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 0,251 | € 502,00 |
*prijsindicatie
- RS-stocknr.:
- 165-5834
- Fabrikantnummer:
- IRFR3707ZTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.25V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 9.6 nC @ 4.5 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.25V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 9.6 nC @ 4.5 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- CN
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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