IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268
- RS-stocknr.:
- 146-4378
- Artikelnummer Distrelec:
- 302-53-402
- Fabrikantnummer:
- IXFT60N65X2HV
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 12,77
(excl. BTW)
€ 15,45
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 17 stuk(s) vanaf 22 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 12,77 |
| 5 - 9 | € 12,05 |
| 10 + | € 11,63 |
*prijsindicatie
- RS-stocknr.:
- 146-4378
- Artikelnummer Distrelec:
- 302-53-402
- Fabrikantnummer:
- IXFT60N65X2HV
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-268 | |
| Series | HiperFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Power Dissipation Pd | 780W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Length | 16.05mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-268 | ||
Series HiperFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Power Dissipation Pd 780W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Length 16.05mm | ||
Automotive Standard No | ||
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
Gerelateerde Links
- IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-268 IXFT60N65X2HV
- IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247 IXFH60N65X2
- IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2
- IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227 IXFN150N65X2
- IXYS HiperFET Type N-Channel MOSFET, 170 A, 650 V Enhancement, 4-Pin SOT-227 IXFN170N65X2