Infineon OptiMOS 3 N-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1
- RS-stocknr.:
- 145-9552
- Fabrikantnummer:
- IPB011N04NGATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 1.632,00
(excl. BTW)
€ 1.975,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 1,632 | € 1.632,00 |
*prijsindicatie
- RS-stocknr.:
- 145-9552
- Fabrikantnummer:
- IPB011N04NGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 188nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.45mm | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 188nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.45mm | ||
Length 10.31mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
N.v.t.
- Land van herkomst:
- CN
Infineon OptiMOS™ 3 Series MOSFET, 180A Maximum Continuous Drain Current, 250W Maximum Power Dissipation - IPB011N04NGATMA1
This MOSFET is optimised for high-performance applications in the electrical and mechanical sectors. It features a sturdy design and efficient operation, making it suitable for automation systems. With a maximum continuous drain current of 180 A and a maximum drain-source voltage of 40V, it provides enhanced efficiency and reliability in circuit performance.
Features & Benefits
• High current handling improves system efficiency and performance
• Low Rds(on) reduces power loss during operation
• Surface mount design allows easy integration into PCBs
• Capable of dissipating up to 250W, serving a variety of applications
• Wide operating temperature range ensures functionality in different environments - N-channel configuration offers improved switching characteristics
Applications
• Utilised in motor control and drive systems
• Suitable for power management in industrial automation
• Employed in DC-DC converters and inverters
• Used for load switching in power distribution systems
• Applicable in renewable energy systems, such as solar inverters
What is the maximum continuous drain current for this device?
The device can handle up to 180A of continuous drain current, making it appropriate for high-power applications.
Can it operate in high temperatures?
Yes, it has a maximum operating temperature of +175°C, allowing consistent performance under challenging conditions.
What are the gate threshold voltage specifications?
The maximum gate threshold voltage is 4V, while the minimum is 2V, providing flexibility in operational compatibility.
What type of mounting does this component support?
This product is designed for surface mounting, facilitating straightforward installation on various circuit boards.
How does this MOSFET contribute to power efficiency?
Its low Rds(on) Value of 1.1 mΩ significantly reduces power loss, enhancing the efficiency of electronic systems overall.
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