Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263 IPB010N06NATMA1

RS-stocknr.:: 906-4353
Fabrikantnummer:: IPB010N06NATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 60 V Enhancement, 7-Pin TO-263 IPB010N06NATMA1

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€ 12,07

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€ 14,604

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RS-stocknr.:: 906-4353
Fabrikantnummer:: IPB010N06NATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	300W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	208nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.31mm
	Height	9.45mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 300W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 208nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.31mm
	Height 9.45mm
	Automotive Standard No

Vrijgesteld

Infineon OptiMOS 5 Series MOSFET, 60V Drain Source Voltage, 180A Continuous Drain Current - IPB010N06NATMA1

This MOSFET is a high-current N-channel enhancement device designed for power switching in surface-mounted applications. It operates across an extended temperature range and is suited to demanding electrical environments where low conduction losses and robust gate control are required.

Features and Benefits:

• 60V drain rating enabling medium-voltage switching capabilities
• 1.5mΩ Rds(on) reducing conduction losses for high-current paths
• 180A continuous drain current supporting heavy load demands
• 300W maximum power dissipation allowing sustained thermal loading
• 208nC typical gate charge enabling predictable switching behaviour
• 20V maximum gate-source voltage protecting gate drive limits

Applications

• Suitable for high-current DC-DC converters in power systems
• Ideal for server and telecoms power distribution modules
• Used with motor controllers requiring low on-resistance switches
• Can be used for battery management and power conditioning
• Appropriate for general purpose power stages in industrial electronics

What thermal range can the device withstand during operation?

It functions across -55°C to 175°C enabling use in both cold-start and high-heat environments.

How is it intended to be mounted on a board?

The component is supplied in a TO-263 package designed for surface-mount placement and soldering.

What gate drive considerations should be observed?

The gate must not exceed 20V Vgs and the typical gate charge of 208nC should be considered when sizing drivers to meet switching speed and loss targets.

Which forward voltage is relevant during body-diode conduction?

The forward conduction voltage is approximately 1.2V and should be included in loss calculations for reverse-current events.