Vishay IRFU1N60A N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF

RS-stocknr.:: 145-1664
Fabrikantnummer:: IRFU1N60APBF
Fabrikant:: Vishay

Vishay IRFU1N60A N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF

Subtotaal (1 tube van 75 eenheden)*

€ 64,43

(excl. BTW)

€ 77,93

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Laatste voorraad RS

Laatste 450 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per tube*
75 +	€ 0,859	€ 64,43

*prijsindicatie

RS-stocknr.:: 145-1664
Fabrikantnummer:: IRFU1N60APBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.4A
	Maximum Drain Source Voltage Vds	600V
	Package Type	IPAK
	Series	IRFU1N60A
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	36W
	Forward Voltage Vf	1.6V
	Maximum Gate Source Voltage Vgs	-30V, +30V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Width	2.39mm
	Height	6.22mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.4A
	Maximum Drain Source Voltage Vds 600V
	Package Type IPAK
	Series IRFU1N60A
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 36W
	Forward Voltage Vf 1.6V
	Maximum Gate Source Voltage Vgs -30V, +30V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Width 2.39mm
	Height 6.22mm
	Standards/Approvals RoHS
	Automotive Standard No

Land van herkomst:: MY

Vishay IRFU1N60A Series Power MOSFET, 600V Drain Source Voltage, 1.4A Continuous Drain Current - IRFU1N60APBF

This power MOSFET is a high-voltage N-channel switching transistor designed for through-hole assembly in industrial electronics. It is intended for applications requiring high drain-source voltage handling and moderate continuous current, operating across a wide temperature range for demanding environments. The device complies with RoHS and is supplied in an IPak through-hole package.

Features and Benefits:

• 600V drain-source voltage for high-voltage switching capability
• 1.4A continuous drain current supporting moderate load currents
• 7Ω maximum Rds(on) reducing conduction losses at low currents
• 36W power dissipation allowing sustained thermal load handling
• 14nC typical gate charge enabling efficient gate-drive behaviour
• Gate-source withstand up to 30V for robust control-voltage margin

Applications

• Suitable for offline power supplies requiring high-voltage switches
• Used for lighting ballast and lamp control circuits
• Ideal for motor-drive gate stage in low-power systems
• Can be used for snubber or clamp-switch functions in converters
• Used with sensor and measurement front ends requiring high Vds

What thermal extremes can the device tolerate in operation?

It operates from -55°C up to 150°C, permitting use in industrial and elevated-temperature assemblies.

How is the transistor mounted on the board?

It is intended for through-hole mounting in an IPak package for secure mechanical retention.

What is the typical forward voltage in conduction scenarios?

The device exhibits a forward voltage of 1.6V under the specified test conditions for body-diode conduction.

Does the gate require special drive considerations due to charge?

With a typical gate charge of 14nC, gate drivers should be chosen to provide sufficient current for the intended switching speed without excessive drive losses.