ROHM BSM 2 N-Channel SiC Power Module, 180 A, 1.2 kV Enhancement, 4-Pin BSM180D12P3C007
- RS-stocknr.:
- 144-2254
- Fabrikantnummer:
- BSM180D12P3C007
- Fabrikant:
- ROHM
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 144-2254
- Fabrikantnummer:
- BSM180D12P3C007
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Series | BSM | |
| Number of Elements per Chip | 2 | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current (Id) | 180 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Height | 17 mm | |
| Length | 122 mm | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 880 W | |
| Minimum Operating Temperature | -40 °C | |
| Mount Type | Surface Mount | |
| Width | 45.6 mm | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Series BSM | ||
Number of Elements per Chip 2 | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current (Id) 180 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Height 17 mm | ||
Length 122 mm | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 880 W | ||
Minimum Operating Temperature -40 °C | ||
Mount Type Surface Mount | ||
Width 45.6 mm | ||
- Land van herkomst:
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
Gerelateerde Links
- ROHM BSM 2 N-Channel SiC Power Module, 180 A, 1200 V Enhancement, 4-Pin BSM180D12P3C007
- ROHM BSM 2 N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001
- ROHM Half Bridge BSM N-Channel SiC Power Module, 240 A, 1200 V Enhancement, 4-Pin BSM120D12P2C005
- ROHM N-Channel SiC Power Module, 204 A, 1200 V BSM180D12P2C101
- STMicroelectronics A2F SiC Power Module, 75 A, 1200 V Enhancement ACEPACK 2 A2F12M12W2-F1
- STMicroelectronics SCT30N120H N-Channel SiC Power Module, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120H
- STMicroelectronics SCT10N120H N-Channel SiC Power Module, 12 A, 1200 V Enhancement, 3-Pin Hip-247 SCT10N120H
- STMicroelectronics SCTH50N120-7 N-Channel SiC Power Module, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCTH50N120-7