IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T
- RS-stocknr.:
- 125-8043
- Fabrikantnummer:
- IXFN420N10T
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 31,13
(excl. BTW)
€ 37,67
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 7 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 72 stuk(s) vanaf 09 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 31,13 |
| 2 - 4 | € 27,20 |
| 5 - 9 | € 26,30 |
| 10 - 19 | € 25,62 |
| 20 + | € 25,00 |
*prijsindicatie
- RS-stocknr.:
- 125-8043
- Fabrikantnummer:
- IXFN420N10T
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 420A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-227 | |
| Series | GigaMOS Trench HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 670nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Width | 25.07 mm | |
| Length | 38.23mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 420A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-227 | ||
Series GigaMOS Trench HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 670nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.07kW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Width 25.07 mm | ||
Length 38.23mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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