IXYS PolarHVTM HiPerFET Type N-Channel MOSFET, 70 A, 500 V Enhancement, 3-Pin ISOPLUS264 IXFL100N50P
- RS-stocknr.:
- 125-8039
- Fabrikantnummer:
- IXFL100N50P
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 28,23
(excl. BTW)
€ 34,16
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 40 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 28,23 |
| 2 - 4 | € 25,46 |
| 5 - 9 | € 24,79 |
| 10 - 24 | € 24,16 |
| 25 + | € 23,57 |
*prijsindicatie
- RS-stocknr.:
- 125-8039
- Fabrikantnummer:
- IXFL100N50P
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | ISOPLUS264 | |
| Series | PolarHVTM HiPerFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.29mm | |
| Height | 26.42mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type ISOPLUS264 | ||
Series PolarHVTM HiPerFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 20.29mm | ||
Height 26.42mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET, IXYS HiperFET PolarHV Series
A range of IXYS PolarHV™ series N-channel Enhancement mode Power MOSFET with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS PolarHVTM HiPerFET Type N-Channel MOSFET, 70 A, 500 V Enhancement, 3-Pin ISOPLUS264
- IXYS Polar HiPerFET Type N-Channel MOSFET, 70 A, 300 V Enhancement, 3-Pin ISOPLUS247
- IXYS Polar HiPerFET Type N-Channel MOSFET, 70 A, 300 V Enhancement, 3-Pin ISOPLUS247 IXFR140N30P
- IXYS HiperFET Type N-Channel MOSFET, 48 A, 500 V Enhancement, 3-Pin TO-264
- IXYS HiperFET Type N-Channel MOSFET, 48 A, 500 V Enhancement, 3-Pin TO-264 IXFK48N50
- IXYS HiperFET, Polar3 N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3
- IXYS HiperFET Type N-Channel MOSFET, 66 A, 850 V Enhancement, 3-Pin TO-264 IXFK66N85X
- IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264
