IXYS HiperFET Type N-Channel MOSFET, 48 A, 500 V Enhancement, 3-Pin TO-264 IXFK48N50
- RS-stocknr.:
- 711-5367
- Artikelnummer Distrelec:
- 302-53-350
- Fabrikantnummer:
- IXFK48N50
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 29,28
(excl. BTW)
€ 35,43
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 9 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 323 stuk(s) vanaf 09 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 12 | € 29,28 |
| 13 + | € 24,60 |
*prijsindicatie
- RS-stocknr.:
- 711-5367
- Artikelnummer Distrelec:
- 302-53-350
- Fabrikantnummer:
- IXFK48N50
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-264 | |
| Series | HiperFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Length | 19.96mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253350 | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-264 | ||
Series HiperFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Length 19.96mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 30253350 | ||
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS HiperFET Type N-Channel MOSFET, 48 A, 500 V Enhancement, 3-Pin TO-264
- IXYS HiperFET Type N-Channel MOSFET, 66 A, 850 V Enhancement, 3-Pin TO-264 IXFK66N85X
- IXYS PolarHVTM HiPerFET Type N-Channel MOSFET, 70 A, 500 V Enhancement, 3-Pin ISOPLUS264
- IXYS PolarHVTM HiPerFET Type N-Channel MOSFET, 70 A, 500 V Enhancement, 3-Pin ISOPLUS264 IXFL100N50P
- IXYS HiperFET N-Channel MOSFET, 66 A, 850 V, 3-Pin TO-264 IXFK66N85X
- IXYS HiperFET, Polar3 N-Channel MOSFET, 98 A, 500 V, 3-Pin PLUS247 IXFX98N50P3
- IXYS Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET, 78 A, 500 V Enhancement, 3-Pin TO-264