DiodesZetex ZXMN10A07Z Type N-Channel MOSFET, 1.4 A, 100 V Enhancement, 3-Pin SOT-89
- RS-stocknr.:
- 121-9963
- Fabrikantnummer:
- ZXMN10A07ZTA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 rol van 1000 eenheden)*
€ 212,00
(excl. BTW)
€ 257,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 - 2000 | € 0,212 | € 212,00 |
| 3000 + | € 0,206 | € 206,00 |
*prijsindicatie
- RS-stocknr.:
- 121-9963
- Fabrikantnummer:
- ZXMN10A07ZTA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-89 | |
| Series | ZXMN10A07Z | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.6W | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.6 mm | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-89 | ||
Series ZXMN10A07Z | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.6W | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature 150°C | ||
Width 2.6 mm | ||
Length 4.6mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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