DiodesZetex DMG1012T-7 Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-89
- RS-stocknr.:
- 922-8367
- Fabrikantnummer:
- DMG1012T-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 99,00
(excl. BTW)
€ 120,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 36.000 stuk(s) vanaf 19 januari 2026
- Plus verzending 456.000 stuk(s) vanaf 26 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 6000 | € 0,033 | € 99,00 |
| 9000 + | € 0,032 | € 96,00 |
*prijsindicatie
- RS-stocknr.:
- 922-8367
- Fabrikantnummer:
- DMG1012T-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Series | DMG1012T-7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.74nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Power Dissipation Pd | 280mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Width | 0.85 mm | |
| Automotive Standard | AEC-Q104, AEC-Q200, AEC-Q100, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Series DMG1012T-7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.74nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Power Dissipation Pd 280mW | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Width 0.85 mm | ||
Automotive Standard AEC-Q104, AEC-Q200, AEC-Q100, AEC-Q101 | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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