Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP BSL215CH6327XTSA1
- RS-stocknr.:
- 110-7726
- Artikelnummer Distrelec:
- 304-36-974
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 60 eenheden)*
€ 17,82
(excl. BTW)
€ 21,54
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- 17.520 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 60 + | € 0,297 | € 17,82 |
*prijsindicatie
- RS-stocknr.:
- 110-7726
- Artikelnummer Distrelec:
- 304-36-974
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2.9mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2.9mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL215CH6327XTSA1
Features and Benefits:
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance
Applications
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages
What temperature range can it operate within reliably?
How many transistor elements are provided on the chip?
What package and pin count should designers plan for?
Which gate‑source and forward voltage limits must be observed?
Gerelateerde Links
- Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP
- Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP
- Infineon Isolated OptiMOS P 2 Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin TSOP BSL308PEH6327XTSA1
- Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1
- Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP
- Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1
- Infineon Type P-Channel MOSFET, 5.5 A Enhancement, 6-Pin TSOP
- Infineon Type P-Channel MOSFET, 5.5 A Enhancement, 6-Pin TSOP BSL307SPH6327XTSA1
