Vishay TrenchFET N-Channel MOSFET, 330 A, 60 V Enhancement, 8-Pin PowerPAK SIRS4614EPW-T1-RE3
- RS-stocknr.:
- 904-978
- Fabrikantnummer:
- SIRS4614EPW-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 1 eenheid)*
€ 3,11
(excl. BTW)
€ 3,76
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending vanaf 09 maart 2027
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 3,11 |
| 10 - 24 | € 2,02 |
| 25 - 99 | € 1,20 |
| 100 - 499 | € 1,16 |
| 500 + | € 1,14 |
*prijsindicatie
- RS-stocknr.:
- 904-978
- Fabrikantnummer:
- SIRS4614EPW-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.000995Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 205W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Standards/Approvals | ROHS | |
| Width | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.000995Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 205W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Standards/Approvals ROHS | ||
Width 5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Vishay power MOSFET designed for high-efficiency operations, specifically tackling power losses associated with conduction in electronic applications. This component is characterised by its robust construction and durability under varying conditions.
TrenchFET Gen IV technology ensures excellent performance with minimal power loss
Rated for a drain-source voltage of 60 V, providing stability in high-voltage environments
Low on-state resistance maximises efficiency in power management applications
Designed with enhanced power dissipation capabilities for reduced thermal issues
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