Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 151 A, 3300 V Enhancement Mode MSCSM330AM15CD3NG
- RS-stocknr.:
- 854-516
- Fabrikantnummer:
- MSCSM330AM15CD3NG
- Fabrikant:
- Microchip
Afbeelding representeert productcategorie
Subtotaal (1 eenheid)*
€ 540,82
(excl. BTW)
€ 654,39
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 februari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 540,82 |
*prijsindicatie
- RS-stocknr.:
- 854-516
- Fabrikantnummer:
- MSCSM330AM15CD3NG
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | SiC Power Module | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1013W | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type SiC Power Module | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1013W | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip Advanced SiC power module offers a phase leg design with impressive ratings, intended primarily for high-efficiency applications in power electronics, ensuring reliability and superior performance under demanding conditions.
Integrated SiC Schottky Diodes provide zero reverse recovery for reduced losses
Kelvin source design simplifies gate drive arrangements
Robust thermal management with excellent junction-to-case thermal resistance
High reliability and direct mounting capabilities ensure seamless integration
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