Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3.3 kV Enhancement Mode MSCSM330DUM07CD3NG
- RS-stocknr.:
- 854-514
- Fabrikantnummer:
- MSCSM330DUM07CD3NG
- Fabrikant:
- Microchip
Afbeelding representeert productcategorie
Subtotaal (1 eenheid)*
€ 898,88
(excl. BTW)
€ 1.087,64
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 898,88 |
*prijsindicatie
- RS-stocknr.:
- 854-514
- Fabrikantnummer:
- MSCSM330DUM07CD3NG
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 3.3kV | |
| Series | mSiC | |
| Mount Type | Heatsink | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1918W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Half Bridge | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 3.3kV | ||
Series mSiC | ||
Mount Type Heatsink | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1918W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Half Bridge | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.
Low R DS(on) ensures minimal power loss
Temperature-independent switching behaviour enhances reliability
Copper baseplate provides excellent thermal management
RoHS compliant for environmentally friendly operations
Gerelateerde Links
- Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330DUM07D3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07D3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07CD3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module, 151 A, 3300 V Enhancement Mode MSCSM330AM15CD3NG
- Microchip Half Bridge mSiC N-Channel SiC Power Module, 151 A, 3300 V Enhancement Mode MSCSM330AM15D3NG
- ROHM 4th Generation SiC MOSFET Half Bridge Evaluation Board SiC MOSFET for SiC MOSFET for Motor Drives
- Infineon EVAL1ED3145MC12HSICTOBO1 Half-Bridge Driver for EVAL-1ED3145MC12H-SIC for 1ED3145MC12H
- Infineon EVAL1ED3142MC12HSICTOBO1 Half-Bridge Driver for EVAL-1ED3142MC12H-SIC for 1ED3142MC12H