Vishay TrenchFET Type N-Channel MOSFET, 74 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA12BDP-T1-GE3

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RS-stocknr.:
735-113
Fabrikantnummer:
SiRA12BDP-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

74A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.006Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

38W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

5.3mm

Height

1.1mm

Length

6.25mm

Automotive Standard

No

Land van herkomst:
TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.

Offers 100 percent Rg and UIS testing for proven device reliability

Supports high power density dc/dc converter applications

Enables efficient synchronous rectification performance

Complies with RoHS standards and halogen free requirements

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