STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB
- RS-stocknr.:
- 719-632
- Fabrikantnummer:
- SGT080R70ILB
- Fabrikant:
- STMicroelectronics
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€ 2,62
(excl. BTW)
€ 3,17
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 2,62 |
*prijsindicatie
- RS-stocknr.:
- 719-632
- Fabrikantnummer:
- SGT080R70ILB
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | P-Channel | |
| Product Type | Transistor | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PowerFLAT | |
| Series | G-HEMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -6, 7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Height | 0.9mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type P-Channel | ||
Product Type Transistor | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PowerFLAT | ||
Series G-HEMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -6, 7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 150°C | ||
Width 8.1mm | ||
Length 8.1mm | ||
Height 0.9mm | ||
- Land van herkomst:
- CN
The STMicroelectronics 700 V 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
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