STMicroelectronics G-HEMT P-Channel Transistor, 26 A, 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO
- RS-stocknr.:
- 719-630
- Fabrikantnummer:
- SGT070R70HTO
- Fabrikant:
- STMicroelectronics
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€ 4,24
(excl. BTW)
€ 5,13
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 4,24 |
*prijsindicatie
- RS-stocknr.:
- 719-630
- Fabrikantnummer:
- SGT070R70HTO
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | P-Channel | |
| Product Type | Transistor | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-LL | |
| Series | G-HEMT | |
| Mount Type | Surface | |
| Pin Count | 13 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -6, 7V | |
| Maximum Power Dissipation Pd | 231W | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.58mm | |
| Height | 2.4mm | |
| Width | 10.4mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type P-Channel | ||
Product Type Transistor | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-LL | ||
Series G-HEMT | ||
Mount Type Surface | ||
Pin Count 13 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -6, 7V | ||
Maximum Power Dissipation Pd 231W | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.58mm | ||
Height 2.4mm | ||
Width 10.4mm | ||
- Land van herkomst:
- CN
The STMicroelectronics 700 V 26 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
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