DiodesZetex BSS138K N channel-Channel MOSFET, 0.31 A, 50 V Enhancement, 3-Pin SOT-23 BSS138K-13
- RS-stocknr.:
- 719-500
- Fabrikantnummer:
- BSS138K-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 0,38
(excl. BTW)
€ 0,46
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 120 | € 0,076 | € 0,38 |
| 125 - 495 | € 0,068 | € 0,34 |
| 500 - 2495 | € 0,062 | € 0,31 |
| 2500 - 4995 | € 0,052 | € 0,26 |
| 5000 + | € 0,048 | € 0,24 |
*prijsindicatie
- RS-stocknr.:
- 719-500
- Fabrikantnummer:
- BSS138K-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 0.31A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS138K | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 0.54W | |
| Typical Gate Charge Qg @ Vgs | 0.95nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 0.31A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS138K | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 0.54W | ||
Typical Gate Charge Qg @ Vgs 0.95nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 3mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed to deliver superior performance in high-efficiency power-management applications. With a maximum drain-source voltage of 50V and low on-resistance characteristics, this device ensures minimal power loss and efficient operation. Incorporating a range of Advanced features, such as low input capacitance and fast switching speeds, this MOSFET is particularly suited for use in automated solutions that demand reliability and compliance with environmental standards. Its robust design, suitable for automotive applications, makes it a versatile choice for modern electronic systems.
Low on resistance ensures efficient power management
Fast switching speed facilitates high-frequency applications
Designed for automotive reliability with AEC-Q100 compliance
RoHS compliant and free from halogen and antimony, supporting eco-friendly initiatives
Total lead-free assembly adheres to stringent environmental regulations
Moisture sensitivity level of 1 ensures reliability in variable conditions
Available in tape and reel packaging, simplifying manufacturing processes
ESD protected gate enhances durability against electrical discharge
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