DiodesZetex DMN6140L N channel-Channel MOSFET, -2 A, 60 V Enhancement, 3-Pin SOT-23 DMN6140L-13
- RS-stocknr.:
- 719-547
- Fabrikantnummer:
- DMN6140L-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 0,76
(excl. BTW)
€ 0,92
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 120 | € 0,152 | € 0,76 |
| 125 - 495 | € 0,134 | € 0,67 |
| 500 - 2495 | € 0,12 | € 0,60 |
| 2500 - 4995 | € 0,104 | € 0,52 |
| 5000 + | € 0,096 | € 0,48 |
*prijsindicatie
- RS-stocknr.:
- 719-547
- Fabrikantnummer:
- DMN6140L-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | DMN6140L | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 2.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series DMN6140L | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.1mm | ||
Width 2.5 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management solutions. It excels in minimising on-state resistance while delivering superior switching performance, making it suitable for a variety of applications including DC-DC converters and analog switches. This semiconductor device is built to support high reliability standards and is fully RoHS compliant, ensuring safety and environmental sustainability in its use across modern electronic designs.
Low on resistance improves overall circuit efficiency
Fast switching speeds enhance performance in power management applications
Supports a maximum drain-source voltage of 60V, suitable for a wide range of use cases
Low input capacitance allows for minimal drive power, increasing system efficiency
Compact SOT23 package facilitates easy integration into Compact electronic designs
Lead-free and fully compliant with environmental regulations, promoting eco-friendly manufacturing
Qualified according to AEC-Q101 standards, ensuring high reliability in automotive applications
Moisture sensitivity level of 1 ensures safe handling and longevity
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