Vishay SIJ4406DP Type N-Channel Single MOSFETs, 78 A, 40 V Enhancement, 4-Pin PowerPAK SIJ4406DP-T1-GE3
- RS-stocknr.:
- 653-105
- Fabrikantnummer:
- SIJ4406DP-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.392,00
(excl. BTW)
€ 1.683,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,464 | € 1.392,00 |
*prijsindicatie
- RS-stocknr.:
- 653-105
- Fabrikantnummer:
- SIJ4406DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 78A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SIJ4406DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00475Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 41.6W | |
| Typical Gate Charge Qg @ Vgs | 10.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Width | 5.25 mm | |
| Height | 1.14mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 78A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SIJ4406DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00475Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 41.6W | ||
Typical Gate Charge Qg @ Vgs 10.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Width 5.25 mm | ||
Height 1.14mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 40 V drain-source voltage. Packaged in PowerPAK SO-8L, it utilizes TrenchFET Gen IV technology to deliver very low gate charge (Qg), reduced output charge (Qoss), and excellent switching efficiency.
Pb Free
Halogen free
RoHS compliant
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