onsemi NTM Type N-Channel Single MOSFETs, 66 A, 40 V Enhancement, 5-Pin DFN-5 NTMFS4D7N04XMT1G
- RS-stocknr.:
- 648-507
- Fabrikantnummer:
- NTMFS4D7N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 8,36
(excl. BTW)
€ 10,12
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 04 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,836 | € 8,36 |
| 100 - 490 | € 0,518 | € 5,18 |
| 500 - 990 | € 0,299 | € 2,99 |
| 1000 + | € 0,293 | € 2,93 |
*prijsindicatie
- RS-stocknr.:
- 648-507
- Fabrikantnummer:
- NTMFS4D7N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.15 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.15 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 5.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The ON Semiconductor Latest 40V standard gate level Power MOSFET Technology with best in class On Resistance for motor driver application. Lower On Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Latest 40V standard gate level power MOSFET technology
Lower On resistance
Lower gate charge
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