onsemi NTM N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG
- RS-stocknr.:
- 277-046
- Fabrikantnummer:
- NTMFSC0D8N04XMTWG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 5 eenheden)*
€ 6,72
(excl. BTW)
€ 8,13
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 oktober 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,344 | € 6,72 |
| 50 - 95 | € 1,276 | € 6,38 |
| 100 - 495 | € 1,184 | € 5,92 |
| 500 - 995 | € 1,092 | € 5,46 |
| 1000 + | € 1,048 | € 5,24 |
*prijsindicatie
- RS-stocknr.:
- 277-046
- Fabrikantnummer:
- NTMFSC0D8N04XMTWG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTM | |
| Package Type | DFN-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.78mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 135W | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 6.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTM | ||
Package Type DFN-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.78mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 135W | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 6.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Ultra low gate charge
High speed switching with low capacitance
Soft body diode reverse recovery
Extreme lower on resistance to minimize conduction losses
Device is Pb Free and RoHS compliant
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