onsemi NTM Type N-Channel MOSFET, 310 A, 40 V Enhancement, 8-Pin DFN-8 NTMFSC0D8N04XMTWG
- RS-stocknr.:
- 277-046
- Fabrikantnummer:
- NTMFSC0D8N04XMTWG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 5,93
(excl. BTW)
€ 7,175
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.375 stuk(s) vanaf 19 januari 2026
- Plus verzending 3.000 stuk(s) vanaf 08 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,186 | € 5,93 |
| 50 - 95 | € 1,128 | € 5,64 |
| 100 - 495 | € 1,044 | € 5,22 |
| 500 - 995 | € 0,962 | € 4,81 |
| 1000 + | € 0,924 | € 4,62 |
*prijsindicatie
- RS-stocknr.:
- 277-046
- Fabrikantnummer:
- NTMFSC0D8N04XMTWG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN-8 | |
| Series | NTM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.78mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 135W | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.15 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 5.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN-8 | ||
Series NTM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.78mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 135W | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Width 6.15 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 5.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Ultra low gate charge
High speed switching with low capacitance
Soft body diode reverse recovery
Extreme lower on resistance to minimize conduction losses
Device is Pb Free and RoHS compliant
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