Microchip LND150 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND150N3-G-P003
- RS-stocknr.:
- 599-150
- Fabrikantnummer:
- LND150N3-G-P003
- Fabrikant:
- Microchip
Subtotaal (1 rol van 2000 eenheden)*
€ 1.668,00
(excl. BTW)
€ 2.018,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 0,834 | € 1.668,00 |
*prijsindicatie
- RS-stocknr.:
- 599-150
- Fabrikantnummer:
- LND150N3-G-P003
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Series | LND150 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -25°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.3mm | |
| Length | 3.05mm | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Width | 1.75 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Series LND150 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -25°C | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 125°C | ||
Height 1.3mm | ||
Length 3.05mm | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Width 1.75 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The Microchip High voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and low CISS
ESD gate protection
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