Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G
- RS-stocknr.:
- 598-897
- Fabrikantnummer:
- LND01K1-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 3000 eenheden)*
€ 1.659,00
(excl. BTW)
€ 2.007,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,553 | € 1.659,00 |
*prijsindicatie
- RS-stocknr.:
- 598-897
- Fabrikantnummer:
- LND01K1-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -25°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.3mm | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Length | 3.05mm | |
| Width | 1.75 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -25°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 125°C | ||
Height 1.3mm | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Length 3.05mm | ||
Width 1.75 mm | ||
Automotive Standard No | ||
The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Low on resistance
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
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