N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba 2SK3878(F)

RS-stocknr.:: 415-354P
Fabrikantnummer:: 2SK3878(F)
Fabrikant:: Toshiba

N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba 2SK3878(F)

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RS-stocknr.:: 415-354P
Fabrikantnummer:: 2SK3878(F)
Fabrikant:: Toshiba

Datasheet
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	900 V
Package Type	TO-3PN
Series	2SK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.3 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Length	15.9mm
Width	4.8mm
Typical Gate Charge @ Vgs	60 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	19mm

N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba 2SK3878(F)

MOSFET N-Channel, 2SK Series, Toshiba