Toshiba 2SK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN 2SK3878(F)

RS-stocknr.:: 415-354P
Fabrikantnummer:: 2SK3878(F)
Fabrikant:: Toshiba

Toshiba 2SK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN 2SK3878(F)

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RS-stocknr.:: 415-354P
Fabrikantnummer:: 2SK3878(F)
Fabrikant:: Toshiba

Datasheet
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	900 V
Series	2SK
Package Type	TO-3PN
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	1.3 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Transistor Material	Si
Width	4.8mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	60 nC @ 10 V
Length	15.9mm
Minimum Operating Temperature	-55 °C
Height	19mm

Toshiba 2SK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN 2SK3878(F)

MOSFET N-Channel, 2SK Series, Toshiba