onsemi EliteSiC Type N-Channel MOSFET, 77 A, 650 V N, 8-Pin HPSOF-8L NTBL023N065M3S
- RS-stocknr.:
- 333-415
- Fabrikantnummer:
- NTBL023N065M3S
- Fabrikant:
- onsemi
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 14,23 |
| 10 - 99 | € 12,82 |
| 100 + | € 11,82 |
*prijsindicatie
- RS-stocknr.:
- 333-415
- Fabrikantnummer:
- NTBL023N065M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EliteSiC | |
| Package Type | HPSOF-8L | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32.6mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 6V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Width | 10.38 mm | |
| Height | 2.3mm | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EliteSiC | ||
Package Type HPSOF-8L | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32.6mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 6V | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Width 10.38 mm | ||
Height 2.3mm | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The ON Semiconductor SiC MOSFET optimized for high-efficiency switching applications, offering low conduction losses and robust thermal performance. Its advanced design enhances reliability in demanding power systems while maintaining compact packaging. This device ensures efficient operation with minimal energy dissipation.
H PSOF8L package
RoHS compliant
Pb free
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