onsemi NTBL Type N-Channel MOSFET, 37 A, 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- RS-stocknr.:
- 220-564
- Fabrikantnummer:
- NTBL075N065SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 7,45
(excl. BTW)
€ 9,01
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 7,45 |
| 10 - 99 | € 6,72 |
| 100 - 499 | € 6,19 |
| 500 - 999 | € 5,75 |
| 1000 + | € 4,66 |
*prijsindicatie
- RS-stocknr.:
- 220-564
- Fabrikantnummer:
- NTBL075N065SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | NTBL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 139W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 4.4V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Height | 2.3mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series NTBL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 139W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 4.4V | ||
Maximum Operating Temperature 175°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Height 2.3mm | ||
- Land van herkomst:
- PH
The ON Semiconductor Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
High Speed Switching with Low Capacitance
RoHS Compliant
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