STMicroelectronics SCT0 Type N-Channel MOSFET, 100 A, 1200 V, 7-Pin H2PAK-7 SCT020H120G3AG

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€ 30,56

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Verpakkingsopties
RS-stocknr.:
330-232
Fabrikantnummer:
SCT020H120G3AG
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

1200V

Series

SCT0

Package Type

H2PAK-7

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

18.5mΩ

Typical Gate Charge Qg @ Vgs

121nC

Forward Voltage Vf

3V

Maximum Power Dissipation Pd

555W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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