STMicroelectronics SCT025H120G3AG N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- RS-stocknr.:
- 214-951
- Fabrikantnummer:
- SCT025H120G3AG
- Fabrikant:
- STMicroelectronics
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- RS-stocknr.:
- 214-951
- Fabrikantnummer:
- SCT025H120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT025H120G3AG | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.4mm | |
| Length | 15.25mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 4.8mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT025H120G3AG | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Width 10.4mm | ||
Length 15.25mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 4.8mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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