onsemi NVH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NVH4L023N065M3S
- RS-stocknr.:
- 327-806
- Fabrikantnummer:
- NVH4L023N065M3S
- Fabrikant:
- onsemi
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€ 17,13
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€ 20,73
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- Plus verzending 450 stuk(s) vanaf 19 januari 2026
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|---|---|
| 1 - 9 | € 17,13 |
| 10 - 99 | € 15,41 |
| 100 + | € 14,21 |
*prijsindicatie
- RS-stocknr.:
- 327-806
- Fabrikantnummer:
- NVH4L023N065M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±22 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 187W | |
| Forward Voltage Vf | 4.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±22 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 187W | ||
Forward Voltage Vf 4.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 23 mΩ device in the M3S TO-247-4L package. It is designed for high-efficiency, high-performance power conversion, providing low on-resistance and fast switching. Ideal for applications in automotive, industrial, and renewable energy systems, this MOSFET ensures reliable operation under demanding conditions.
Devices are Pb Free and are RoHS Compliant
Qualified for Automotive According to AEC Q101
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