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Datasheets

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	NVH
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Maximum Gate Source Voltage Vgs	25 V
	Typical Gate Charge Qg @ Vgs	56nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Length	15.8mm
	Height	22.74mm
	Width	5.2 mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series NVH
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Maximum Gate Source Voltage Vgs 25 V
	Typical Gate Charge Qg @ Vgs 56nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Length 15.8mm
	Height 22.74mm
	Width 5.2 mm
	Automotive Standard AEC-Q101

Datasheet - NVH4L080N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter, Automotive Auxiliary Motor Drive applications.

AEC Q101 qualified

100% avalanche tested

Low effective output capacitance

RoHS compliant

onsemi NVH Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin TO-247

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−4L Silicon Carbide MOSFET, N-Channel, 1200 V, 80 mΩ, TO247-4L

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