Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
- RS-stocknr.:
- 284-770
- Fabrikantnummer:
- IQE050N08NM5CGSCATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 6000 eenheden)*
€ 10.464,00
(excl. BTW)
€ 12.660,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 6000 + | € 1,744 | € 10.464,00 |
*prijsindicatie
- RS-stocknr.:
- 284-770
- Fabrikantnummer:
- IQE050N08NM5CGSCATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 5.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 5.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the Advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.
Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces power losses
Robust thermal resistance for reliability
Avalanche tested for extreme conditions
Pb free lead plating for safety
Halogen free construction meets IEC standards
Qualified per JEDEC industry standards
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET, 323 A, 80 V, 9-Pin PG-WHTFN-9 IQD016N08NM5CGSCATMA1
- Infineon OptiMOS 6 N-Channel MOSFET, 597 A, 40 V, 9-Pin PG-WHTFN-9 IQD005N04NM6CGSCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 9-Pin PG-WHTFN-9 IQE065N10NM5CGSCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET, 445 A, 60 V, 9-Pin PG-WHTFN-9 IQD009N06NM5CGSCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET, 447 A, 60 V, 9-Pin PG-WHTFN-9 IQDH88N06LM5CGSCATMA1