onsemi NXH Type N-Channel MOSFET, 76 A, 40 V Enhancement, 56-Pin Power 56 FDMS8333LN
- RS-stocknr.:
- 277-063
- Fabrikantnummer:
- FDMS8333LN
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 6,87
(excl. BTW)
€ 8,31
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,687 | € 6,87 |
| 100 - 240 | € 0,653 | € 6,53 |
| 250 - 490 | € 0,605 | € 6,05 |
| 500 - 990 | € 0,557 | € 5,57 |
| 1000 + | € 0,536 | € 5,36 |
*prijsindicatie
- RS-stocknr.:
- 277-063
- Fabrikantnummer:
- FDMS8333LN
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NXH | |
| Package Type | Power 56 | |
| Mount Type | Surface | |
| Pin Count | 56 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Width | 5.1 mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NXH | ||
Package Type Power 56 | ||
Mount Type Surface | ||
Pin Count 56 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Width 5.1 mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The ON Semiconductor N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimise switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimised for low gate charge, low RDS(ON), fast switching speed and body and body diode reverse recovery performance.
100% UIL tested
MSL 1 robust package design
RoHS compliant
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