onsemi NXH N-Channel MOSFET, 38 A, 1.2 kV Enhancement, 22-Pin PIM22 NXH030F120M3F1PTG
- RS-stocknr.:
- 277-054
- Fabrikantnummer:
- NXH030F120M3F1PTG
- Fabrikant:
- onsemi
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€ 66,24
(excl. BTW)
€ 80,15
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 28 stuk(s) vanaf 16 november 2026
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Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 1 - 9 | € 66,24 | - |
| 10 + | € 59,60 | € 66,40 |
*prijsindicatie
- RS-stocknr.:
- 277-054
- Fabrikantnummer:
- NXH030F120M3F1PTG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NXH | |
| Package Type | PIM22 | |
| Mount Type | Snap-in | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 38.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 34.2W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NXH | ||
Package Type PIM22 | ||
Mount Type Snap-in | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 38.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 34.2W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Power Module contains a 30 mΩ, 1200V SiC MOSFET full-bridge and a thermistor, featuring an Al2O3 DBC (Direct Bonded Copper) in an F1 package. This high-performance module is designed for efficient power conversion and is ideal for applications such as solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems.
Pb free
Halide free and RoHS compliant
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