ROHM RD3G08CBLHRB Type N-Channel MOSFET, 80 A, 40 V Depletion, 3-Pin TO-252 RD3G08CBLHRBTL
- RS-stocknr.:
- 264-956
- Fabrikantnummer:
- RD3G08CBLHRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 5,83
(excl. BTW)
€ 7,055
(incl. BTW)
Voeg 70 eenheden toe voor gratis bezorging
Op voorraad
- 2.485 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,166 | € 5,83 |
| 50 - 95 | € 1,106 | € 5,53 |
| 100 - 495 | € 1,024 | € 5,12 |
| 500 - 995 | € 0,944 | € 4,72 |
| 1000 + | € 0,91 | € 4,55 |
*prijsindicatie
- RS-stocknr.:
- 264-956
- Fabrikantnummer:
- RD3G08CBLHRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | RD3G08CBLHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series RD3G08CBLHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET that stands out for its impressive performance across various applications. Designed for high efficiency, this component excels in handling significant power levels with minimum heat generation, making it ideal for demanding automotive and industrial environments. Its compact DPAK package ensures easy integration into space-constrained layouts, while the RoHS-compliant, lead-free construction guarantees compliance with modern environmental standards.
Conforms to RoHS standards ensuring environmental safety
Compact DPAK package facilitates space efficient designs
Tested under rigorous conditions for guaranteed reliability
Gerelateerde Links
- ROHM RD3P06BBKH Type N-Channel MOSFET, 59 A, 100 V Depletion, 8-Pin TO-252 RD3P06BBKHRBTL
- ROHM RD3 Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-252 RD3G08CBKHRBTL
- Microchip DN2625 Type N-Channel MOSFET, 250 V Depletion, 3-Pin TO-252 DN2625K4-G
- ROHM AG084F Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 AG084FGD3HRBTL
- ROHM AG085FG Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 AG085FGD3HRBTL
- ROHM RD3N Type N-Channel Single MOSFETs, 105 A, 80 V Enhancement, 3-Pin TO-252 RD3N07BBHTL1
- STMicroelectronics STD Type N-Channel MOSFET, 10 A, 480 V Depletion, 3-Pin TO-252
- STMicroelectronics STD Type N-Channel MOSFET, 10 A, 480 V Depletion, 3-Pin TO-252 STD13N60M6
