ROHM RD3P06BBKH Type N-Channel MOSFET, 59 A, 100 V Depletion, 8-Pin TO-252 RD3P06BBKHRBTL
- RS-stocknr.:
- 264-943
- Fabrikantnummer:
- RD3P06BBKHRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 4,82
(excl. BTW)
€ 5,83
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 85 stuk(s) vanaf 19 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 0,964 | € 4,82 |
| 50 - 95 | € 0,916 | € 4,58 |
| 100 - 495 | € 0,848 | € 4,24 |
| 500 - 995 | € 0,78 | € 3,90 |
| 1000 + | € 0,752 | € 3,76 |
*prijsindicatie
- RS-stocknr.:
- 264-943
- Fabrikantnummer:
- RD3P06BBKHRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P06BBKH | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P06BBKH | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET, engineered for robust applications requiring high efficiency and reliability. With a breaking voltage of up to 100V and a continuous drain current of 59A, this device is designed for demanding tasks in automotive and industrial environments. It features a compact DPAK/TO-252 package, allowing for easy integration into various circuit designs.
Suitable for various applications including automotive and industrial electronics
Pulsed drain current capability of up to 118A underscores versatility in demanding environments
Utilises Pd free plating ensuring compatibility with modern production processes
Gerelateerde Links
- ROHM RD3G08CBLHRB Type N-Channel MOSFET, 80 A, 40 V Depletion, 3-Pin TO-252 RD3G08CBLHRBTL
- ROHM AG096F Type N-Channel Single MOSFETs, 59 A, 100 V Enhancement, 3-Pin TO-252 AG096FPD3HRBTL
- Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1
- Microchip DN2625 Type N-Channel MOSFET, 250 V Depletion, 3-Pin TO-252 DN2625K4-G
- STMicroelectronics STD Type N-Channel MOSFET, 10 A, 480 V Depletion, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET, 59 A, 55 V, 3-Pin TO-252
- STMicroelectronics STD Type N-Channel MOSFET, 10 A, 480 V Depletion, 3-Pin TO-252 STD13N60M6