STMicroelectronics STB Type N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- RS-stocknr.:
- 214-851
- Fabrikantnummer:
- STB45N60DM6
- Fabrikant:
- STMicroelectronics
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*prijsindicatie
- RS-stocknr.:
- 214-851
- Fabrikantnummer:
- STB45N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 210W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.85mm | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 210W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.85mm | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics High-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Extremely high dv/dt ruggedness
Zener protected
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