STMicroelectronics STB Type N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6
- RS-stocknr.:
- 214-850
- Fabrikantnummer:
- STB45N60DM6
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 1000 eenheden)*
€ 5.408,00
(excl. BTW)
€ 6.544,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 5,408 | € 5.408,00 |
*prijsindicatie
- RS-stocknr.:
- 214-850
- Fabrikantnummer:
- STB45N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | STB | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 210W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Standards/Approvals | RoHS | |
| Width | 10.4 mm | |
| Length | 15.85mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series STB | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 210W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Standards/Approvals RoHS | ||
Width 10.4 mm | ||
Length 15.85mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics High-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Extremely high dv/dt ruggedness
Zener protected
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