STMicroelectronics STGF3NC120HD, Type N-Channel IGBT, 6 A 1200 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 795-9094
- Fabrikantnummer:
- STGF3NC120HD
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 10,98
(excl. BTW)
€ 13,285
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 1.325 stuk(s) vanaf 03 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,196 | € 10,98 |
| 25 - 45 | € 2,086 | € 10,43 |
| 50 - 120 | € 1,88 | € 9,40 |
| 125 - 245 | € 1,69 | € 8,45 |
| 250 + | € 1,608 | € 8,04 |
*prijsindicatie
- RS-stocknr.:
- 795-9094
- Fabrikantnummer:
- STGF3NC120HD
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 6A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 25W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 16.4mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 6A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 25W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 16.4mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- STMicroelectronics, Type N-Channel IGBT, 6 A 1200 V, 3-Pin TO-220, Through Hole
- STMicroelectronics, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface
- STMicroelectronics STGYA75H120DF2, Type N-Channel IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole
- STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface
- STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- STMicroelectronics, Type N-Channel IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGW30NC120HD, Type N-Channel IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole
- STMicroelectronics, Type N-Channel IGBT, 15 A 600 V, 3-Pin TO-220, Through Hole