STMicroelectronics STGYA75H120DF2, N-Channel IGBT, 150 A 1.2 kV, 3-Pin Max247, Through Hole

Bekijk alle IGBTs
Ontvang bulkkorting

Voeg 150 meer toe om € 13,50 te besparen

Bekijk bulkkorting

Subtotaal (1 tube van 30 eenheden)*

€ 216,18

(excl. BTW)

€ 261,57

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks
Per stuk
Per tube*
Bespaar
30 - 120€ 7,206€ 216,18-
150 +€ 7,116€ 213,48€ 13,50

*prijsindicatie

RS-stocknr.:
234-8892
Fabrikantnummer:
STGYA75H120DF2
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Maximum Continuous Collector Current Ic

150A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1.2kV

Maximum Power Dissipation Pd

750W

Package Type

Max247

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2.6V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

VCE(sat) = 2.1 V (typ.) @ IC = 75 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

Gerelateerde Links