STMicroelectronics STGYA75H120DF2 IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole
- RS-stocknr.:
- 234-8894
- Fabrikantnummer:
- STGYA75H120DF2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 7,91
(excl. BTW)
€ 9,57
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 460 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 7,91 |
| 5 - 9 | € 7,51 |
| 10 - 24 | € 6,76 |
| 25 - 49 | € 6,31 |
| 50 + | € 6,16 |
*prijsindicatie
- RS-stocknr.:
- 234-8894
- Fabrikantnummer:
- STGYA75H120DF2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 750 W | |
| Package Type | Max247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 750 W | ||
Package Type Max247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
5 μs of short-circuit withstand time
VCE(sat) = 2.1 V (typ.) @ IC = 75 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
Gerelateerde Links
- STMicroelectronics STGYA75H120DF2 IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole
- STMicroelectronics STGYA50M120DF3 Single IGBT, 100 A 1200 V Max247
- STMicroelectronics STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads
- STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGF3NC120HD IGBT, 6 A 1200 V, 3-Pin TO-220FP, Through Hole
- onsemi FGY75T120SWD Single IGBT, 150 A 1200 V, 3-Pin TO247-3LD, Through Hole
- STMicroelectronics GWA40MS120DF4AG Single IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- Infineon IKQ75N120CT2XKSA1, P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247, Through Hole