STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 151-940
- Fabrikantnummer:
- STGB3NC120HDT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 10,14
(excl. BTW)
€ 12,27
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Op voorraad
- 975 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 2,028 | € 10,14 |
| 50 - 95 | € 1,928 | € 9,64 |
| 100 - 495 | € 1,784 | € 8,92 |
| 500 + | € 1,642 | € 8,21 |
*prijsindicatie
- RS-stocknr.:
- 151-940
- Fabrikantnummer:
- STGB3NC120HDT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 14A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 16mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 14A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 16mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
Gerelateerde Links
- STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- onsemi, Type N-Channel IGBT, 35 A 1200 V, 3-Pin TO-263, Surface
- onsemi HGT1S10N120BNST, Type N-Channel IGBT, 35 A 1200 V, 3-Pin TO-263, Surface
- STMicroelectronics, Type N-Channel IGBT, 30 A 420 V, 3-Pin TO-263, Surface
- STMicroelectronics, Type N-Channel IGBT, 10 A 375 V, 3-Pin TO-263, Surface
- STMicroelectronics, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- STMicroelectronics, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface