STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 76,32

(excl. BTW)

€ 92,34

(incl. BTW)

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  • Plus verzending 210 stuk(s) vanaf 22 december 2025
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30 - 60€ 2,544€ 76,32
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RS-stocknr.:
168-7744
Fabrikantnummer:
STGW30NC120HD
Fabrikant:
STMicroelectronics
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Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

220 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Land van herkomst:
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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