STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS-stocknr.:
- 686-8341
- Fabrikantnummer:
- STGB10NB37LZT4
- Fabrikant:
- STMicroelectronics
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€ 4,63
(excl. BTW)
€ 5,602
(incl. BTW)
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,315 | € 4,63 |
| 10 - 18 | € 2,20 | € 4,40 |
| 20 - 48 | € 1,98 | € 3,96 |
| 50 - 98 | € 1,78 | € 3,56 |
| 100 + | € 1,70 | € 3,40 |
*prijsindicatie
- RS-stocknr.:
- 686-8341
- Fabrikantnummer:
- STGB10NB37LZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 375 V | |
| Maximum Gate Emitter Voltage | 12V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 9.35 x 4.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -65 °C | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 375 V | ||
Maximum Gate Emitter Voltage 12V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -65 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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