STMicroelectronics STGB10NC60KDT4, N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 168-7720
- Fabrikantnummer:
- STGB10NC60KDT4
- Fabrikant:
- STMicroelectronics
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€ 800,00
(excl. BTW)
€ 970,00
(incl. BTW)
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- Plus verzending 2.000 stuk(s) vanaf 11 november 2026
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Aantal stuks | Per stuk | Per rol* | Bespaar |
|---|---|---|---|
| 1000 - 1000 | € 0,80 | € 800,00 | - |
| 2000 - 4000 | € 0,756 | € 756,00 | € 88,00 |
| 5000 + | € 0,732 | € 732,00 | € 340,00 |
*prijsindicatie
- RS-stocknr.:
- 168-7720
- Fabrikantnummer:
- STGB10NC60KDT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Standards/Approvals | RoHS | |
| Series | STGx10NC60KD | |
| Width | 9.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 4.6mm | ||
Standards/Approvals RoHS | ||
Series STGx10NC60KD | ||
Width 9.35mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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