Infineon IGBT, 20 A 650 V, 3-Pin PG-TO-247, Through Hole
- RS-stocknr.:
- 273-7441
- Fabrikantnummer:
- IHW20N65R5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 3,84
(excl. BTW)
€ 4,64
(incl. BTW)
Voeg 44 eenheden toe voor gratis bezorging
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 1,92 | € 3,84 |
| 10 - 98 | € 1,745 | € 3,49 |
| 100 - 248 | € 1,60 | € 3,20 |
| 250 + | € 1,48 | € 2,96 |
*prijsindicatie
- RS-stocknr.:
- 273-7441
- Fabrikantnummer:
- IHW20N65R5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JESD-022, RoHS | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JESD-022, RoHS | ||
Height 5.21mm | ||
Length 21.1mm | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications. It has easy parallel switching capability due to positive temperature coefficient in VCEsat. This IGBT is recommended for induction cooking, inverter zed microwave ovens and resonant converters.
Low EMI
Halogen free
RoHS compliant
High ruggedness
Pb free lead plating
Stable temperature behaviour
Very low VCEsat and low Eoff
Very tight parameter distribution
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