Infineon IKW50N65WR5XKSA1 IGBT, 50 A 650 V, 3-Pin PG-TO-247
- RS-stocknr.:
- 244-2919
- Fabrikantnummer:
- IKW50N65WR5XKSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 244-2919
- Fabrikantnummer:
- IKW50N65WR5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 282W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.42mm | |
| Width | 16.13 mm | |
| Series | Reverse Conducting | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 282W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 175°C | ||
Length 41.42mm | ||
Width 16.13 mm | ||
Series Reverse Conducting | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Monolithic diode optimized for PFC and welding applications. It has stable temperature behavior and very low VCEsat and low Eoff also Easy parallel switching capability based on positive temperature coefficient of VCEsat.
Low EMI
Low electrical parameters depending(dependence) on temperature
Qualified according to JESD-022 for target applications
Pb-free lead plating
Ro HS compliant
Complete product spectrum and Pspice Models
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