Infineon IKW50N65WR5XKSA1 IGBT, 50 A 650 V PG-TO247-3
- RS-stocknr.:
- 244-2918
- Fabrikantnummer:
- IKW50N65WR5XKSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 244-2918
- Fabrikantnummer:
- IKW50N65WR5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 282 W | |
| Package Type | PG-TO247-3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 282 W | ||
Package Type PG-TO247-3 | ||
The Infineon Monolithic diode optimized for PFC and welding applications. It has stable temperature behavior and very low VCEsat and low Eoff also Easy parallel switching capability based on positive temperature coefficient of VCEsat.
Low EMI
Low electrical parameters depending(dependence) on temperature
Qualified according to JESD-022 for target applications
Pb-free lead plating
Ro HS compliant
Complete product spectrum and Pspice Models
Low electrical parameters depending(dependence) on temperature
Qualified according to JESD-022 for target applications
Pb-free lead plating
Ro HS compliant
Complete product spectrum and Pspice Models
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