Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin PG-TO-247

RS-stocknr.:: 260-5101
Fabrikantnummer:: IKW40N65ES5XKSA1
Fabrikant:: Infineon

Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin PG-TO-247

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Aantal stuks	Per stuk	Per verpakking*
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10 - 18	€ 4,375	€ 8,75
20 - 48	€ 4,08	€ 8,16
50 - 98	€ 3,79	€ 7,58
100 +	€ 3,54	€ 7,08

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RS-stocknr.:: 260-5101
Fabrikantnummer:: IKW40N65ES5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Maximum Continuous Collector Current Ic	79A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	230W
	Package Type	PG-TO-247
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.35V
	Maximum Gate Emitter Voltage VGEO	±20 ±30 V
	Maximum Operating Temperature	175°C
	Height	5.21mm
	Width	16.13mm
	Standards/Approvals	JEDEC
	Series	IKW
	Length	42mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Maximum Continuous Collector Current Ic 79A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 230W
	Package Type PG-TO-247
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.35V
	Maximum Gate Emitter Voltage VGEO ±20 ±30 V
	Maximum Operating Temperature 175°C
	Height 5.21mm
	Width 16.13mm
	Standards/Approvals JEDEC
	Series IKW
	Length 42mm
	Automotive Standard No

Datasheet - IKW40N65ES5XKSA1

Infineon IKW Series IGBT, 79A Maximum Continuous Collector Current, 230W Maximum Power Dissipation - IKW40N65ES5XKSA1

This IGBT is a three‑pin power transistor designed for high‑power switching in industrial contexts. It operates across a wide temperature range and conforms to established semiconductor testing standards, providing a straightforward solution for applications that require substantial current handling and appreciable thermal dissipation capability.

Features and Benefits:

• 79A collector current enabling sustained high‑load operation
• 230W power dissipation supporting significant thermal throughput
• 650V gate‑emitter voltage tolerance allowing high‑voltage switching
• 1.35V VCE(sat) reducing conduction losses during Active modes
• -40 to 175°C rated temperature range permitting use in harsh environments

Applications

• Suitable for motor drive assemblies requiring high current
• Used with inverter stages in industrial power converters
• Ideal for switching elements in renewable‑energy inverters
• Can be used for high‑power UPS and industrial power-supply systems

What package does it use for mounting compatibility?

It is supplied in a PG‑TO‑247 package that suits standard TO‑247 heatsinking and mounting arrangements.

How many electrical connections are present for circuit integration?

The device provides three pins for gate, collector and emitter connections in a typical transistor configuration.

Which approval indicates standardised test recognition?

It holds JEDEC approval confirming adherence to common semiconductor test criteria.

What is the maximum collector‑emitter saturation voltage under load?

The maximum VCE(sat) specified is 1.35V, which indicates the expected conduction drop during on‑state operation.